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Model
Brand |
SAMSUNG |
Series |
860 EVO Series |
Model |
MZ-76E2T0B/AM |
Device Type |
Internal Solid State Drive (SSD) |
Used For |
Consumer |
Details
Form Factor
|
2.5" |
Capacity |
2TB |
Memory Components
|
Samsung V-NAND 3-bit MLC |
Interface |
SATA III |
Controller |
MJX |
Cache |
Samsung 2GB Low Power DDR4 SDRAM |
Performance
Max Sequential Read |
Up to 550 MBps |
Max Sequential Write |
Up to 520 MBps |
4KB Random Read |
Random (QD1): Up to 10,000 IOPS Random (QD32): Up to 98,000 IOPS |
4KB Random Write |
Random (QD1): Up to 42,000 IOPS Random (QD32): Up to 90,000 IOPS |
MTBF
|
1,500,000 hours |
Environmental
Power Consumption (Active) |
Average: 3.0W Maximum: 4.0W (Burst mode) |
Operating Temperature |
0°C ~ +70°C |
Max Shock Resistance |
1,500G & 0.5ms (Half sine) |
Dimensions & Weight
Height |
7.00mm |
Width |
70.00mm |
Depth |
100.00mm |
Weight |
100.00g |
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